Flash devices have a lmitation in eras/write cycles and also in data retention time.
A prediction normally applies to random failures during oprational use.
Data retention is from my point of view not a ramdom but more a deterministic failure.
When doing a reliability prediction with 217plus/PRISM is data retention used in the models for the IC’s or in the Process grade factors (e.g. wearout)?
If not how do I have to add this failure into a prediction?