Name: Reliability of High Temperature Electronics
SKU: PUB-HIGHTEMP
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Reliability of High Temperature Electronics

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Standard electronic devices are based on military-type semiconductors which are rated for 125°C. Without cooling, engine-located electronics in many applications can face operating temperatures between -55°C and +200°C. Thus, the development of appropriate 200°C and higher semiconductor devices will make it necessary to utilize air or liquid as the cooling medium. This book provides a working knowledge of high temperature devices/packaging, addressing the reliability and packaging concerns for designing at elevated temperatures.

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SKU: PUB-HIGHTEMP Category: Reliability Publications Tag: Reliability Physics/Physics-of-Failure Analysis

Product Description

1 Background on The Behavior of Bipolar and MOS Transistors and Inverters at High Temperatures	1
1.1 Introduction	1
1.2 Background In High Temperature Electronics	1
1.2.1 Cmos And BJT High Temperature Operation	2
1.2.2 Latch-Up	8
1.3 High Temperature Silicon Device Behavior, Summary	10
2 Bipolar Junction Transistor At Elevated Temperatures	15
2.1 Operation of The Bipolar Junction Transistor	15
2.2 Model of The Bipolar Junction Transistor	19
2.3 Temperature Dependent Parameters of The BJT	22
2.4 Temperature Dependence of Current Gain (β)	25
2.5 Temperature Dependence Of Bjt Inverter Circuit	26
References	29
3 Computer Simulations of Bipolar Junction Transistor and Experimental Validation	31
3.1 Simulations at Elevated Temperatures	31
3.1.2 Pspice Simulations for High Temperature Electronics	33
3.2 Experimental Analysis of BJT Behavior	35
3.2.1 Beta Versus Temperature	35
3.3 Bjt Inverter Voltage Transfer Characteristic at Elevated Temperatures	37
3.4 Electrical Measurements To Obtain BJT Thermal Resistance	39
3.5 Observations of Bipolar Junction Transistor Behavior at High Temperatures	41
3.5.1 Beta Versus Temperature Dependence	41
3.6 Bipolar Transistor Voltage Transfer Characteristics (VTC)	42
References	45
4 Introduction To The High Temperature Behavior of The Metal Oxide Silicon Field Effect Transistor	47
4.1 Physical Operation of a MOSFET	47
4.2 Temperature Dependent Parameters	50
4.3 N-MOS Inverter Voltage Transfer Characteristic ( VTC )	51
4.4 Cmos Inverter Voltage Transfer Characteristic	53
4.5 Propagation Delay of The Cmos Inverter	58
4.6 Simulations of The NMOS Inverter VTC	61
4.6.1 Computer Simulations	61
4.6.2 Pspice Simulation	62
4.7 Computer Simulations of The Cmos Inverter VTC	63
4.7.1 Program Simulation	63
4.7.2 Pspice Simulation	64
4.7.3 Propagation Delay of The CMOS Inverter	65
4.8 Experimental Analysis of The NMOS Inverter	67
4.9 Observations of MOSFET Behavior at High Temperatures	69
4.9.1 NMOS Inverter	69
4.9.2 CMOS Inverter	70
4.10 Conclusions	71
4.11 Recommendations for Further Work	72
References	73
5 High Temperature Modeling and Thermal Characteristics of GaAs MESFETs	75
5.1 Introduction	75
5.2 State-Of-The-Art for Modeling High Temperature Characteristics	77
5.3 Chapter Outline and Objectives	78
5.4 Physical Properties of MESFETs at Elevated Temperatures	79
5.4.1 Gallium Arsenide	79
5.4.2 Energy Gaps and Intrinsic Carrier Densities	79
5.5 Carrier Mobilities and Saturation Velocity	84
5.6 Modeling of MESFETs	88
5.6.1 Introduction	88
5.6.2 Principles of MESFET Operation	89
5.6.3 Linear Region of MESFET Characteristics	90
5.6.4 Saturation Region Model	91
5.7 Empirical MESFET Model	92
5.8 Temperature Related Properties of GaAs MESFET	96
References	101
6 Computer Simulation and Electrical Measurements of The MESFET Temperature Dependence	103
6.1 Introduction To The Simulation of Temperature Dependence	103
6.2 Simulation Results for The MESFET	105
6.2.1 Comparison of MESFET Simulation: Hyperbolic and Quadratic Model	105
6.2.2 Simulation Results of The ZTC Bias Point of GaAs MESFET	114
6.2.3 Temperature Dependent Characteristics of The GaAs MESFET	126
6.2.4 Electrical Measurement at Elevated Temperatures	135
6.3 Thermal Measurements of GaAs Devices Using IR Microscopy Techniques	138
6.3.1 Operation Principle of The IR Microscope	138
6.3.2 IR Microscopy Measurement Results	140
6.4 Finite Element Analysis of Heat Transfer In The GaAs MESFET	142
6.4.1 General Mathematical Assumptions and Model	142
6.4.2 Simulation Results and Comparison with Measurements	143
6.5 Summary and Conclusions	146
7 Temperature Effects of Heterostructure Transistors and Circuits	151
7.1 Introduction	151
7.2 Physical Properties of AlGaAs/GaAs HFET	152
7.2.1 AlGaAs/GaAs HFET Device Structures	152
7.2.2 Principles of HFET Operation	153
7.2.3 Modulation Doping	154
7.3 Aim-Spice HFET Model	155
7.3.1 HFET Model for Aim-Spice Input File	156
7.3.2 Current-Voltage Model Used By Aim-Spice	156
7.4 Current-Voltage Characteristics of AlGaAs/GaAs Hfet	159
7.4.1 Intrinsic Current-Voltage Characteristics	159
7.4.2 Extrinsic Current-Voltage Characteristics	161
7.5 Temperature Dependent Characteristics of HFET	164
7.5.1 Energy Gap And Intrinsic Carrier Concentration	164
7.5.2 Threshold Voltage and Dielectric Permittivity	168
7.5.3 Saturation Velocity and Electron Mobility	169
7.5.4 Temperature Dependence of Current-Voltage Characteristics	174
References	179
8 High Temperature Behavior of The HFET Inverter	181
8.1 Introduction	181
8.2 Inverter Circuits	181
8.2.1 Basic Inverter	181
8.2.2 Direct-Coupled Fet Logic (DCFL) Inverter	183
8.2.3 Buffered Fet Logic (BFL) Inverter	183
8.3 Failure Mechanisms of AlGaAs/GaAs HFET at Elevated Temperatures	185
8.3.1 Interdiffusion	185
8.4 Kink Effect	190
8.5 Ohmic Contact Resistance Increase	191
8.6 Thermal Runaway Effect	192
8.7 Gate Degradation	192
8.8 Conclusions	193
References	197
9 Elevated Temperature Power Semiconductor Devices	199
9.1 Introduction	199
9.2 Power Semiconductor Device Materials	200
9.3 Power Semiconductor Device Reliability	201
9.3.1 Device Failure Modes at Elevated Temperatures	202
9.4 Power Transistor Packaging	204
9.4.1 Materials for Power Transistor Packaging	205
9.5 Power Package Failure Modes and Reliability	209
9.5.1 Thermomechanical Stress	209
9.5.2 Moisture Related Failure Mechanisms	211
9.5.3 Thermal Fatigue	211
9.6 Heat Dissipation In Power Transistors	212
9.7 Power Dissipation In Power Transistors	213
9.7.1 Thermal Management	213
9.8 Simulation of Elevated Temperature Effects	213
9.8.1 Process Simulation	214
9.8.2 Numerical Device Simulation	215
9.8.3 Device Simulation	215
9.8.4 Package Simulation	217
9.9 Tests and Measurements	217
9.9.1 Electrothermal Models For Measurement of Power Device Parameters	218
9.9.2 Thermal Impedance Measurements	219
References	221
10 Design Optimization of High Temperature Electronic Packaging	225
10.1 Introduction	225
10.2 Design Constraints Imposed by Temperatures	226
10.2.1 Die Information	226
10.2.2 Mounting Platform Technology Information	227
10.3 High Temperature Packaging Design Goals	227
10.3.1 Performance	227
10.3.2 Reliability	228
10.4 Applying The High Temperature Design Guidelines	228
10.4.1 Die to Lead Interconnect	230
10.4.2 Lead	231
10.4.3 Case	231
10.4.4 Die and Substrate Attach	233
10.4.5 Lead Seals	233
10.4.6 Lid and Lid Seal	233
10.5 High Temperature Electronic Package	234
11 Introduction to The High Temperature Reliability Issues of MMICs	245
11.1 Background	245
11.2 State-Of-The-Art of MMIC High Temperature Behavior	247
11.3 Chapter Outline	249
References	253
12 MMICs and Monte Carlo Technique	257
12.1 Monolithic Microwave Integrated Circuits for High Temperatures	257
12.1.1 MMIC Status	257
12.1.2 MMIC Performance	258
12.1.3 MMIC Applications	259
12.2 Monte Carlo Techniques for Design and High Temperature Prediction	260
12.2.1 Introduction to Monte Carlo Methods	260
12.2.2 High Temperature Reliability Simulations by Monte Carlo Techniques	262
References	265
13 MMIC High Temperature Reliability	269
13.1 Introduction	269
13.2 MMIC High Temperature Reliability Mathematics	271
13.3 Investigations of MMIC Reliability	277
13.4 Concerns of High Temperature MMIC Reliability	279
References	283
14 MMIC High Temperature Testing Methodology and Analysis	287
14.1 Introduction to Arrhenius Model	287
14.2 Accelerated Life Tests	291
14.2.1 Introduction	291
References	295
15 MMIC Circuit High Temperature Analysis	297
15.1 MMIC Circuit Modeling for High Temperature Design	297
15.1.1 Introduction	297
15.1.2 Operation Principles of MESFET	298
15.1.3 Theoretical I-V Characteristics of GaAs MESFET	302
15.1.4 GaAs MESFET Spice3 Model	305
15.2 MMIC Spice Circuit Analysis	311
15.2.1 Spice Analysis For MMICs	311
15.2.1.1 Transimpedance Amplifier (TIA)	311
15.2.1.2 EG-6101 Low-Noise Amplifier	314
15.3 The Methodology to Determine the Correlation Matrix of MMICs	314
15.3.1 Introduction to Correlation Mathematics	314
15.3.2 Statistical Model for the Correlation between MMIC Devices	316
15.3.3 The Methodology to Estimate the Correlation of MMICs	318
References	321
16 Monte Carlo High Temperature Reliability Model for MMICs	325
16.1 Introduction	325
16.2 The Methodology to Estimate MMIC High Temperature Performance	325
16.2.1 The Joint Probability Method Via Monte Carlo Simulation	325
16.2.2 The Non-Markovian Method Via Monte Carlo Simulation	327
16.2.3 The MMIC Monte Carlo Technique	328
16.3 MMIC Circuit Reliability Model	328
16.3.1 The Given Conditions For MMIC Reliability Model	328
16.3.2 Procedures to Model MMIC Reliability	331
16.3.3 Validation of MMIC High Temperature Model	338
16.3.3.1 EG-6101 LNA and TIA High Temperature Analysis	338
16.3.3.2 EG-6010 LNA and EG-6203 Power Amplifier Reliability Analysis	341
16.3.3.3 Simulation Results	341
References	345
A1 Software and Manual, User’s Guide	347
A1-1 Introduction	347
A1-2 How to Run Device2	347
A1-2-1 Detailed Description for F1	348
A1-3 Detailed Description for Function Key 2	349
A1-4 Description for F3	351
A1-5 Description for F4	352
A1-6 Description for F5 and F6	354
A1-7 Description for F7	355
A1-8 Description for F8	356
A2 Program for Calculation of The Current-Voltage Characteristics of The HFET	357
B Program for Calculation of The Temperature Dependent Characteristicsof The HFET	359
B-1 For Calculation of The Temperature Dependence of Energy Gap for GaAs	359
B-2 For Calculation of The Temperature Dependence of Intrinsic Carrier Concentration of GaAs	360
B-3 For Calculation of The Temperature Dependence of Saturation Velocity	361
B-4 For Calculation of The Temperature Dependence of Electron Mobility at Three Different Concentration	362
B-5 For Calculation of The Temperature Dependence of Current-Voltage Characteristics	364
B-6 For Calculation of The Temperature Dependence of Drain-To-Source Saturation Current	367
B-7 For Calculation of The Temperature Dependence of Extrinsic Drain Saturation Voltage	369
C Aim-Spice Simulation Circuits and Input Files	371
C-1 Simulation Circuit For Current-Voltage Characteristics	371
C-2 Input File for I-V Characteristics (Ids Versus Vds) (for Vg = 0.3v only)	371
C-3 Input File for I-V Characteristics (Ids Versus Vg) (for Vdd = 1v only)	371
C-4 Direct-Coupled FET Logic (DCFL) Inverter Circuit	372
C-5 Input File for Direct-Coupled Fet Logic (DCFL) Inverter	372
C-6 Buffered FET Logic (BFL) Inverter Circuit	373
C-7 Input File for Buffered FET Logic (BFL) Inverter	373

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